APA (7th ed.) Citation

Niedra, J. M. (2006). Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C. National Aeronautics and Space Administration, Glenn Research Center.

Chicago Style (17th ed.) Citation

Niedra, Janis M. Switching Characteristics of a 4H-SiC Based Bipolar Junction Transistor to 200 °C. Cleveland, Ohio: National Aeronautics and Space Administration, Glenn Research Center, 2006.

MLA (8th ed.) Citation

Niedra, Janis M. Switching Characteristics of a 4H-SiC Based Bipolar Junction Transistor to 200 °C. National Aeronautics and Space Administration, Glenn Research Center, 2006.


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