Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C
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Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C

Bibliographic Details
Main Author: Niedra, Janis M.
Corporate Author: NASA Glenn Research Center.
Format: Government Document Online Book
Language:English
Published: Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, [2006]
Series:NASA contractor report ; NASA CR-214257.
Access:ONLINE VERSION
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Description
Item Description:Title from title screen (viewed on Oct. 20, 2010).
"November 2006."
Physical Description:1 online resource (6 p.) : ill.