Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C
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Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C

Bibliographic Details
Main Author: Niedra, Janis M.
Corporate Author: NASA Glenn Research Center.
Format: Government Document Online Book
Language:English
Published: Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, [2006]
Series:NASA contractor report ; NASA CR-214257.
Access:ONLINE VERSION
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042 |a pcc 
049 |a WWW 
074 |a 0830-H-14 (online) 
086 0 |a NAS 1.26:2006-214257 
100 1 |a Niedra, Janis M. 
245 1 0 |a Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C  |h [electronic resource] /  |c Janis M. Niedra. 
260 |a Cleveland, Ohio :  |b National Aeronautics and Space Administration, Glenn Research Center,  |c [2006] 
300 |a 1 online resource (6 p.) :  |b ill. 
490 1 |a NASA/CR- ;  |v 2006-214257 
500 |a Title from title screen (viewed on Oct. 20, 2010). 
500 |a "November 2006." 
536 |b NAS3-98008 
536 |b NAS3-00145 
536 |d WBS 423799.03.01 
650 7 |a Junction transistors.  |2 nasat 
650 7 |a High temperature.  |2 nasat 
650 7 |a Bipolar transistors.  |2 nasat 
650 7 |a Switching.  |2 nasat 
650 7 |a Static loads.  |2 nasat 
650 7 |a Electric potential.  |2 nasat 
710 2 |a NASA Glenn Research Center. 
830 0 |a NASA contractor report ;  |v NASA CR-214257. 
856 4 0 |u http://purl.access.gpo.gov/GPO/LPS126907  |z ONLINE VERSION 
852 |b WWW