Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C
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Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C

Bibliographic Details
Main Author: Niedra, Janis M.
Corporate Authors: NASA Glenn Research Center., International Energy Conversion Engineering Conference
Other Authors: Schwarze, Gene E.
Format: Government Document Online Conference Proceeding Book
Language:English
Published: Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, [2005]
Series:NASA technical memorandum ; 213996.
Access:ONLINE VERSION
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