Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C
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Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C

Bibliographic Details
Main Author: Niedra, Janis M.
Corporate Authors: NASA Glenn Research Center, International Energy Conversion Engineering Conference
Other Authors: Schwarze, Gene E.
Format: Government Document Online Conference Proceeding Book
Language:English
Published: Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, [2005]
Series:NASA technical memorandum ; 213996.
Access:ONLINE VERSION
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035 |a (OCoLC)694791364 
040 |a GPO  |c GPO  |d MvI 
049 |a WWW 
074 |a 0830-D (online) 
086 0 |a NAS 1.15:2005-213996 
100 1 |a Niedra, Janis M. 
245 1 0 |a Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C  |h [electronic resource] /  |c Janis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005. 
260 |a Cleveland, Ohio :  |b National Aeronautics and Space Administration, Glenn Research Center,  |c [2005] 
300 |a 1 online resource (9 p.) :  |b ill. 
490 1 |a NASA/TM- ;  |v 2005-213996 
500 |a Title from title screen (viewed on Jan. 3, 2011). 
500 |a "December 2005." 
500 |a "AIAA-2005-5718." 
504 |a Includes bibliographical references (p. 9). 
536 |d WBS-22-612-50-81-12 
650 7 |a Static characteristics.  |2 nasat 
650 7 |a Silicon carbides.  |2 nasat 
650 7 |a Transistors.  |2 nasat 
650 7 |a Switching.  |2 nasat 
650 7 |a Electric potential.  |2 nasat 
650 7 |a P-n junctions.  |2 nasat 
700 1 |a Schwarze, Gene E. 
710 2 |a NASA Glenn Research Center. 
711 2 |a International Energy Conversion Engineering Conference  |n (3rd :  |d 2005 :  |c San Francisco, Calif.) 
830 0 |a NASA technical memorandum ;  |v 213996. 
856 4 0 |u http://purl.fdlp.gov/GPO/gpo2661  |z ONLINE VERSION 
852 |b WWW