Silicon carbide, a high temperature semiconductor
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Silicon carbide, a high temperature semiconductor

Bibliographic Details
Main Author: Powell, J. Anthony
Corporate Authors: Lewis Research Center, Cleveland Electrical/Electronics Conference and Exposition
Format: Government Document Online Conference Proceeding Book
Language:English
Published: Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, [1983]
Series:NASA technical memorandum ; 83514.
Access:ONLINE VERSION
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008 121009s1983 ohua obt f000 0 eng c
035 |a (OCoLC)812275777 
040 |a GPO  |c GPO  |d GPO  |d MvI 
049 |a WWW 
074 |a 0830-D (online) 
086 0 |a NAS 1.15:83514 
100 1 |a Powell, J. Anthony. 
245 1 0 |a Silicon carbide, a high temperature semiconductor  |h [electronic resource] /  |c J. Anthony Powell. 
260 |a Cleveland, Ohio :  |b National Aeronautics and Space Administration, Lewis Research Center,  |c [1983] 
300 |a 1 online resource (5 p.) :  |b ill. 
490 1 |a NASA technical memorandum ;  |v 83514 
500 |a Title from title screen (viewed Oct. 9, 2012). 
500 |a Prepared for the Cleveland Electronic Conference (CECON '83) sponsored by the Institute of Electrical and Electrotics Engineers, Inc. Cleveland, Ohio, October 4-6, 1983. 
504 |a Includes bibliographical references (p. 5). 
650 7 |a High temperature environments.  |2 nasat 
650 7 |a Semiconductor devices.  |2 nasat 
650 7 |a Silicon carbides.  |2 nasat 
710 2 |a Lewis Research Center. 
711 2 |a Cleveland Electrical/Electronics Conference and Exposition  |d (1983 :  |c Cleveland, Ohio) 
776 0 8 |i Print version:  |a Powell, J. Anthony.  |t Silicon carbide, a high temperature semiconductor.  |w (OCoLC)812289558 
830 0 |a NASA technical memorandum ;  |v 83514. 
856 4 0 |u http://purl.fdlp.gov/GPO/gpo29230  |z ONLINE VERSION 
852 |b WWW